? semiconductor components industries, llc, 2005 october, 2005 ? rev. 11 1 publication order number: bzx84c2v4lt1/d bzx84b4v7lt1, bzx84c2v4lt1 series zener voltage regulators 225 mw sot?23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot?23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. features ? 225 mw rating on fr?4 or fr?5 board ? zener breakdown voltage range ? 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model ? tight tolerance series available (see page 4) ? pb?free packages are available mechanical characteristics case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v?0 maximum ratings rating symbol max unit total power dissipation on fr?5 board, (note 1) @ t a = 25 c derated above 25 c thermal resistance, junction?to?ambient p d r ja 225 1.8 556 mw mw/ c c/w total power dissipation on alumina substrate, (note 2) @ t a = 25 c derated above 25 c thermal resistance, junction?to?ambient p d r ja 300 2.4 417 mw mw/ c c/w junction and storage temperature range t j , t stg ?65 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.62 in. 2. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina. device package shipping ? ordering information bzx84cxxxlt1 sot?23 3000/tape & reel see specific marking information in the device marking column of the electrical characteristics table on page 3 o f this data sheet. device marking information bzx84cxxxlt3 sot?23 10,000/tape & ree l bzx84bxxxlt1 sot?23 3000/tape & reel bzx84bxxxlt3 sot?23 10,000/tape & ree l http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. bzx84cxxxlt1g sot?23 (pb?free) 3000/tape & reel bzx84bxxxlt1g sot?23 (pb?free) 3000/tape & reel bzx84cxxxlt3g 10,000/tape & ree l bzx84bxxxlt3g 10,000/tape & ree l sot?23 (pb?free) sot?23 (pb?free) sot?23 case 318 style 8 3 cathode 1 anode marking diagram 3 1 2 1 xxx m xxx = device code m = date code* = pb?free package *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location)
bzx84b4v7lt1, bzx84c2v4lt1 series http://onsemi.com 2 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @ v r = 0 and f = 1 mhz zener voltage regulator i f v i i r i zt v r v z v f
bzx84b4v7lt1, bzx84c2v4lt1 series http://onsemi.com 3 electrical characteristics ? bzx84cxxxlt1 series (standard tolerance) (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) (devices listed in bold, italic are on semiconductor preferred devices.) device* device marking v z1 (volts) @i zt1 =5ma (note 3) z zt1 ( ) @ i zt1 = 5 ma v z2 (v) @i zt2 =1ma (note 3) z zt2 ( ) @ i zt2 = 1 ma v z3 (v) @i zt3 =20ma (note 3) z zt3 ( ) @ i zt3 = 20 ma max reverse leakage current vz (mv/k) @ i zt1 = 5 ma c (pf) @ v r = 0 f = 1 mhz min nom max min max min max v r volts i r a @ min max bzx84c2v4lt1, g z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 ?3.5 0 450 bzx84c2v7lt1, g z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 ?3.5 0 450 bzx84c3v0lt1, g z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 ?3.5 0 450 bzx84c3v3lt1, g z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 ?3.5 0 450 bzx84c3v6lt1, g z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 ?3.5 0 450 bzx84c3v9lt1, g z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 ?3.5 ?2.5 450 bzx84c4v3lt1, g w9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 ?3.5 0 450 bzx84c4v7lt1, g z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 ?3.5 0.2 260 bzx84c5v1lt1, g z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 ?2.7 1.2 225 bzx84c5v6lt1, g z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 ?2.0 2.5 200 bzx84c6v2lt1, g z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 bzx84c6v8lt1, g z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 bzx84c7v5lt1, g z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 bzx84c8v2lt1, g z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 bzx84c9v1lt1, g z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 bzx84c10lt1, g z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 bzx84c11lt1, g y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 bzx84c12lt1, g y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 bzx84c13lt1, g y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 bzx84c15lt1, g y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 bzx84c16lt1, g y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 bzx84c18lt1, g y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 bzx84c20lt1, g y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 bzx84c22lt1, g y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 bzx84c24lt1, g y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 device device marking v z1 below @i zt1 =2ma z zt1 below @ i zt1 = 2 ma v z2 below @i zt2 = 0.1 m- a z zt2 below @ i zt4 = 0.5 ma v z3 below @i zt3 =10ma z zt3 below @ i zt3 = 10 ma max reverse leakage current vz (mv/k) below @ i zt1 = 2 ma c (pf) @ v r = 0 f = 1 mhz min nom max min max min max v r (v) i r a @ min max bzx84c27lt1, g y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 bzx84c30lt1, g y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 bzx84c33lt1, g y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 bzx84c36lt1, g y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 bzx84c39lt1, g y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 bzx84c43lt1, g y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 bzx84c47lt1, g y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 bzx84c51lt1, g y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 bzx84c56lt1, g y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 bzx84c62lt1, g y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 bzx84c68lt1, g y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 bzx84c75lt1, g y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. * the ?g? suffix indicates pb?free package available.
bzx84b4v7lt1, bzx84c2v4lt1 series http://onsemi.com 4 electrical characteristics ? bzx84bxxxl (tight tolerance series) (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) device device marking v z (volts) @ i zt = 5 ma (note 4) z zt ( ) @ i zt = 5 ma (note 4) max reverse leakage current vz (mv/k) @ i zt = 5 ma c (pf) @ v r =0, f = 1 mhz i r @ v r min nom max max a volts min max bzx84b4v7lt1, g t10 4.61 4.7 4.79 80 3 2 ?3.5 0.2 260 bzx84b5v1lt1, g t11 5.00 5.1 5.20 60 2 2 ?2.7 1.2 225 bzx84b5v6lt1, g t12 5.49 5.6 5.71 40 1 2 ?2 2.5 200 bzx84b6v2lt1, g t13 6.08 6.2 6.32 10 3 4 0.4 3.7 185 bzx84b6v8lt1, g t14 6.66 6.8 6.94 15 2 4 1.2 4.5 155 bzx84b7v5lt1, g t15 7.35 7.5 7.65 15 1 5 2.5 5.3 140 bzx84b8v2lt1, g t16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 bzx84b9v1lt1, g t17 8.92 9.1 9.28 15 0.5 6 3.8 7 130 bzx84b16lt1, g t19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 bzx84b18lt1, g t20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 4. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. * the ?g? suffix indicates pb?free package available.
bzx84b4v7lt1, bzx84c2v4lt1 series http://onsemi.com 5 typical characteristics vz , temperature coefficient (mv/ c) v z , nominal zener voltage (v) ?3 ?2 ?1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 c to +150 c) v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c typical t c values
bzx84b4v7lt1, bzx84c2v4lt1 series http://onsemi.com 6 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c ?55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v)
bzx84b4v7lt1, bzx84c2v4lt1 series http://onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue an *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 8: pin 1. anode 2. no connection 3. cathode d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bzx84c2v4lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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